Low-power-consumption silicon 2D field-effect transistor with high-quality dielectric interfaces

https://techxplore.com/news/2024-08-dimensional-power-consumption-field-effect.html

"overcomes problems with high gate leakage...  1.25 nm thick single-crystalline aluminum oxide smooths interactions between 2D materials and other parts... aluminum gate just 100 µm wide, 250 nm long... complete insulation by leaving gap between gates.... van der Waals transfer properly aligns materials on underlying wafer before moving stack over as single step... smaller, thinner computer chips, smartphones recharging less often, 5G devices with AI apps, IoT components few atoms thick"

Related: Engineers develop a bendable, programmable, non-silicon microprocessor that requires only 6 mW of power
https://techxplore.com/news/2024-09-bendable-programmable-silicon-microprocessor-requires.html