Aluminum yttrium nitride/ gallium nitride semiconductor enables energy-efficient, powerful high-frequency electronics

https://phys.org/news/2024-08-semiconductor-material-alyn-energy-efficient.html

"metal-organic chemical vapor deposition... yttrium concentration up to 16% (at 8% induces 2D electron gas)... impressive sheet resistance values, electron density, electron mobility... adapted well to gallium nitride's wurtzite structure with suitable composition... can be used in high electron mobility transistors... scalable, structurally uniform... large-area semiconductor structures, non-volatile memory with no layer thickness limitation, information and communications technology... future: reduce oxidation"