Study reveals potential of superparaelectric materials as gate dielectrics in next-gen microelectronics

https://phys.org/news/2024-05-reveals-potential-superparaelectric-materials-gate.html

"ultrathin superparaelectric ferroelectric oxide film... polar order local, dispersed in amorphous matrix with crystalline size down to few nm, excellent dimensional scalability... good f37±3 k value for film sputter-deposition at room temperature, leading to small ~0.46 nm equivalent oxide thickness... film's critical size 1.3 to 1.8 nm dictated by sputter-deposition temperature... well-dispersed nanometer polar clusters, high breakdown strength (~10.5 MV·cm−1) ensuring low leakage current. high electrical fatigue resistance"