Epitaxial multilayer MoS2 wafers promise high-performance transistors

https://techxplore.com/news/2022-06-epitaxial-multilayer-mos2-wafers-high-performance.html

"trilayer MoS2 field-effect room temperature mobility can reach up to 234.7 cm2·V-1·s-1, setting a new mobility record for devices based on 2D transition-metal sulfide semiconductors... channel length 100 nm current density (Vds=1 V) increased from 0.4 mA·μm-1 for monolayer to 0.64/0.81 mA·μm-1 for bilayer/trilayer... enhancement factor 60% / 102.5%... 40 nm short-channel devices record-high on-current densities of 1.70/1.22/0.94 mA/μm at Vds=2/1/0.65 V, high on/off ratio exceeding 107"

Related: Engineers develop new integration route for tiny transistors

https://techxplore.com/news/2022-08-route-tiny-transistors.html