Thermal constraining semiconductors maintain structural integrity even as they reach higher processing speeds and temperatures

https://techxplore.com/news/2026-03-generation-memory-material-property.html

"bismuth ferrite multiferroic combines capacitor/ magnet... external voltage applied, electric polarization direction switches, also influencing magnetic properties... shrinks when heated, enabling tightly packing memory cells without physical degradation/ more layers in vertical NAND/ DRAM... improves durability of chips running at high temperatures during intense AI training tasks, extends lifespan, increases cooling systems' energy efficiency... ultra-dense 3D memory chips, in-memory computing"

Related: Understanding negative thermal expansion in hydrogenated cobalt zirconide
https://www.eurekalert.org/news-releases/1118662