Mass-producible, low-cost, power-efficient, ultra-compact, electrically pumped lasers grown between silicon oxide layers, for photonic chips

https://www.eurekalert.org/news-releases/1119045

"III-V photonic crystal/ silicon-on-insulator wafer monolithic integration, using selective lateral heteroepitaxy... low-threshold telecom band lasers not requiring fragile suspended structures for light confinement... strong optical confinement/ mechanical robustness... positioned vertical indium gallium arsenide on indium phosphide quantum wells aligning with laser's maximum optical field... avoids etched air hole damage boosting pumping efficiency, only single growth step... edge-/ surface-emitting lasers"