Redefining gallium nitride power devices for adoption in EVs, data centers and renewable energy inverters

https://www.eurekalert.org/news-releases/1115989

"low threshold voltage making prone to accidental switching due to electrical noise, overcome suppressing positive charges accumulation at critical interfaces within gate, enabling ultrahigh >4 V turn-on voltage mimicking silicon-based chip stability... narrow safety margins often leak/ fail if experience >5–6 V, now safe from gate breakdown up to 15.5 V, reducing gate leakage up to 10,000X... developed patented gate stack using aluminium–titanium oxide... expected widespread deployment in high-value electronics"