Ultra-small, faster electronics grown applying Molecular Beam Epitaxy on 2D molybdenum disulfide semiconductors instead of on silicon

https://techxplore.com/news/2026-01-ultra-small-high-electronics-grown.html

"overcomes contact resistance (lengthy charge transfer) potentially enabling 1nm node transistors (20nm charge transfer length)... grow crystalline semimetallic antimony contacts in vacuum, atoms arranged in specific, high-quality crystal orientation, 13nm transfer length, resistance where materials meet down to 18nm (was 60) beyond which degradation starts, meeting 1nm node requirements... 100X larger/ crystalline... future: p-type tungsten diselenide contacts enabling complete integrated circuits, scale"