Diamond-based industrial, nuclear, space and computer circuits integrate 2D materials bypassing n-type doping bottleneck

https://phys.org/news/2026-01-2d-material-solution-obstacle-diamond.html

"diamond ideal semiconductor (superior heat dissipation/ radiation resistance) but difficult to N-type dope (P-type relatively easy) since phosphorus atoms makes conductive only at high temperatures... overcome using 2D heterointegration: electrostatic doping layering molybdenum disulfide on top of p-type diamond, electrons tunnel into diamond layer at interface, creating PN junction without structural strain/ temperature requirements... smaller, more efficient high-power electronics"