Microelectronics fabrication that significantly improves energy efficiency by stacking active components on the back end of a computer chip

https://www.eurekalert.org/news-releases/1109566

"logic (transistors)/ memory fabricated in 1 compact stack on 1 chip... 2 nm thick amorphous indium oxide active channel layer grown at relatively cool 150°C preventing damage to existing front-end circuitry, minimized defects (oxygen vacancies)... added ferroelectric hafnium-zirconium-oxide layer, ending up with 20 nm back-end transistors with built-in memory, 10 ns switching speed, lower voltage... generative AI, deep learning, computer vision... future: integrate these back-end memory transistors onto single circuit"