AlN-based high electron mobility transistor improves high-power wireless electronics/ addresses gallium semiconductor supply chain vulnerabilities

https://techxplore.com/news/2025-12-aluminum-nitride-transistor-advances-gen.html

"ultra-thin gallium nitride layer on bulk single-crystal aluminum nitride (AlN) substrate... AlN has ultrawide bandgap allowing it to withstand higher temperatures/ voltages, with low defect densities/ high thermal conductivity... lower channel temperature enables operation at even higher power, extending communication/ radar range... about 1 million-fold fewer crystalline defects significantly improves performance, several orders magnitude less gallium... RF power amplifiers for: 5G/ 6G, radar"