Silicon/ germanium/ tin atoms' short-range ordering enclosing quantum well reduces resistance in/ improves performance of quantum computers

https://www.eurekalert.org/news-releases/1106469

"tested barriers made of mix of silicon/ germanium/ tin atoms to enclose quantum well, which was expected to create resistance, but instead, electrical charges (mobility) moved faster/ more efficiently through quantum well... suggests barriers' atoms are not random but rather arrange themselves in consistent, orderly fashion relative to main material... acts as speed control knob without relying solely on strain/ alloying... neuromorphic/ quantum computing, microelectronics (miniaturization of standard silicon CMOS)"

Related: Scientists achieve record-breaking electrical conductivity in new quantum material

https://www.eurekalert.org/news-releases/1107188