Nitrogen vacancies resolve asymmetric carrier injection, by accelerating carrier relaxation in GaN/AlN quantum wells, improving efficiency of LEDs

https://phys.org/news/2025-08-defect-carrier-gan-based.html

"energy loss/ reduced LED performance when electrons cool significantly slower than holes... relaxation time reduced from 8.61 to 0.15 ps, comparable to holes (0.12ps)... strengthened electron-phonon coupling, further accelerating carrier cooling... continuous band structures/ strong nonadiabatic coupling, enabling ultrafast electron relaxation... defects outside trapped electrons did not improve cooling... mitigates sub-10% carrier quantum efficiency, improving UV LED efficiency... also controlling semiconductor properties"