High-quality thin film/ high-performance optoelectronic device fabrication at lower temperature by precise control of hydrogen dilution ratio

https://www.eurekalert.org/news-releases/1093100

"amorphous silicon optoelectronic device with minimal defects at low 90°C (60% cooler) by controlling hydrogen to silane gas ratio enabling fabrication of flexible sensors that detect light/ convert it into electrical signals... requires precise thin films deposition on thin, bendable, heat-sensitive substrates... applying hydrogen passivation enhances electrical performance, minimizes thin-film defects... utilizes photoresist sacrificial layer... no complex plasma etching processes... wearable electronics, image/ optical sensors”