Antiferromagnets outperform ferromagnets in ultrafast, energy-efficient magnetoresistive random-access memory in the GHz range

https://www.eurekalert.org/news-releases/1096422

"as medium for writing digital information, fabricated nanoscale chiral antiferromagnet Mn₃Sn dot device, electrically induced antiferromagnetic rotation enabling fast, high-fidelity spin ordering control... efficient switching with 0.1-ns current pulses requiring no external magnetic field... 1K error-free switching cycles using 2D rotation of the chiral spin structure with an effective inertial mass... antiferromagnets can do what ferromagnets do, and more... semiconductor devices powered by antiferromagnets"

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