Tiny transistor made from gallium-doped indium oxide surrounding channel where current flows, enhances gate efficiency and scalability

https://www.eurekalert.org/news-releases/1086058

"doped indium oxide with gallium suppressing oxygen vacancies, improving transistor reliability... channel region of gate-all-around transistor atomic-layer deposition coated with InGaOx thin film, then film heated transforming it into crystalline structure needed for electron mobility... 44.5 cm2/Vs mobility... stable under applied stress for nearly 3 hours operation... high computational field-effect transistors, for such applications as big data and artificial intelligence"