Ultra-thin interlayer defect passivation in quantum dot LEDs enables brighter, more efficient/ cost-effective, eco-friendly displays

https://www.eurekalert.org/news-releases/1079321

"ZnSe QDs alloyed with narrow-bandgap ZnTe forms green-emitting ZnSeTe QDs, free of toxic/ expensive phosphorus precursors, achieving spectral tuning... low-temperature balanced injection/ high-temperature growth method inserts ultra-thin ZnSeS alloy interlayer assisting thickened ZnS outer shell growth, alleviating lattice mismatch between ZnSe and ZnS, and thickened shell, passivating surface defects, enhancing radiative recombination efficiency/ optical stability... 20.6% peak external quantum efficiency"