Squishy semiconductor transforms under pressure for dense, fast, long-lasting, energy-efficient data storage

https://www.eurekalert.org/news-releases/1081790

"non-volatile phase change memory of alternating zinc telluride/ ethylenediamine layers... 2 phase transitions at low 2.1 and 3.3 GPa pressure (1/10th of usual pressure needed) shrinking material up to 8% potentially enabling digital information encoding... additional applications: (1) different properties depending on which direction squeezed, adding additional turability, (2) photonics, because emits UV whose glow might shift depending on phase, useful in fiber optics or optical computing... future: effect of temperature changes"