Hypotaxy technique for growth of wafer-scale single-crystal 2D semiconductors, overcoming the limitations of existing processes

https://www.eurekalert.org/news-releases/1075619

"energy saving, better performance transition metal dichalcogenide semiconductors now scalable... completely new growth method leveraging 2D graphene or hexagonal boron nitride as templates, guiding dichalcogenide crystal alignment enabling synthesis of perfectly single-crystalline films on any substrate at low temperature (400°C) compatible with existing semiconductor manufacturing... template naturally dissappeaers without requiring post-removal process... high charge carrier mobility, excellent uniformity"