Low-energy nitrogen ion implantation into tungsten disulfide enables 2D lateral p-n junction construction

https://phys.org/news/2024-09-energy-ion-implantation-enables-2d.html

"hugely increased arithmetic power... controllable doping (shallower implantation depth)... precisely increasing implantation dose converts from n-type to bipolar or even p-type... exhibits satisfactory self-powered photodetection, stability... at ion implantation dose 1×1014 ions cm-2, current on/off ratio can reach 3.9×106... combined with lithography technique, patterned doped 2D WS2 lateral p-n homojunction successfully fabricated... 0.39 V, 35 mA W-1, responsivity, 9.8×1010 Jones detectivity"