Epitaxial growth of 1D metal as a gate electrode for 2D semiconductor logic circuits

https://phys.org/news/2024-07-scientists-nanometer-sized-transistors.html

"<1 nm width... 2D semiconductor molybdenum disulfide's mirror twin boundary is 0.4 nm 1D metal used as gate electrode overcoming limitations of lithography... 1D MTB metallic phase achieved controlling 2D semiconducto crystal structure at atomic level... channel width modulated by electric field can be as small as 3.9 nm... minimizes parasitic capacitance due to simple structure and extremely narrow gate width... ultra-miniaturized low-power, high-performance semiconductors"