Aluminum scandium nitride films maintain ferroelectric properties at up to 600°C for next-gen ferroelectric memory

https://phys.org/news/2024-07-aluminum-scandium-nitride-enabling-gen.html

"ferroelectric enables non-volatile, energy-efficient, fast read/ write... now, won't degrade/ lose polarization when exposed to hydrogen heat during fabrication, regardless of electrode (platinum or titanium nitride) ... Pr remains stable above 120 µC/cm², regardless of electrode/ treatment atmosphere, 5X larger than HfO2-based films, 3X larger than PZT-based... high bond energy between Al/ N prevents hydrogen penetrating film... small Ec change (by only about 9%, attributed only to changes in film's crystal lattice constant)"