Researchers enhance performance of hafnia-based memory devices by doping ferroelectric materials with aluminum

https://techxplore.com/news/2024-06-hafnia-based-memory-devices-doping.html

"hafnium oxide ferroelectric memories operate at low voltages high speeds... doping ferroelectric materials with aluminum, creating high-performance ferroelectric thin films... metal-ferroelectric-semiconductor... adjusted ferroelectric layers' capacitance by fine-tuning thickness, area ratio of metal-to-metal, metal-to-channel ferroelectric layers, improving performance, reducing energy consumption... memory window exceeding 10 V, enabling Quad-Level Cell storing 16 data levels... high-speed, and high-density, AI"