Utilizing palladium for addressing contact issues of buried oxide thin film transistors

https://phys.org/news/2024-04-palladium-contact-issues-oxide-thin.html

"hydrogen injection method where Pd electrode (high hydrogen diffusion rate and hydrogen solubility) catalyzes hydrogen dissociation at low temperature, transporting (up to 100 μm depth) atomic hydrogen to amorphous oxide semiconductor- electrode interface, enabling highly conductive oxide layer... contact resistance reduced 2 orders magnitude, charge carrier mobility increased from 3.2 cm2V–1s–1 to nearly 20 cm2V–1s–1... capacitor-less, high-density DRAM thin film transistors, displays"