World's first N-channel diamond field-effect transistor for CMOS integrated circuits

https://techxplore.com/news/2024-03-world-channel-diamond-field-effect.html

"ultra wide-bandgap energy 5.5 eV, high carriers mobilities, withstanding high temperature and radiation... energy efficient... grow high-quality monocrystalline n-type diamond semiconductors with smooth, flat atomic terraces by doping diamond with low concentration phosphorus... n-channel diamond semiconductor layer atop another diamond layer doped with concentrated phosphorus reducing source and drain contact resistance... field-effect mobility 150 cm2/V・sec at 300°C... electronics, spintronics, MEMS sensors"

Related: New structure transistors for advanced technology node CMOS ICs

https://techxplore.com/news/2024-03-transistors-advanced-technology-node-cmos.html