Material discovery may help realize low-cost and long-life memory chips

https://phys.org/news/2023-08-material-discovery-low-cost-long-life-memory.html

"stable rhombohedral ferroelectric Hf(Zr)+xO2 with ultra-low coercive field (~0.65 MV/cm) reduces switching barrier ferroelectric dipoles in HfO2-based materials... intercalation of excess Hf(Zr) atoms within hollow sites forming ordered array. Density functional theory calculations (DFT) show intercalated atoms stabilize ferroelectric phase and reduce switching barrier... high remnant polarization (Pr) 22 μC/cm2, small saturation polarization field (1.25 MV/cm) and high endurance (1012 cycles)... low-cost long-life memory"