Fermi-level tuning to improve the stability of 2D graphene-based FETs

https://techxplore.com/news/2022-06-fermi-level-tuning-stability-2d-graphene-based.html

"tuned Fermi level... maximize energy distance between charge carriers and defect bands... improve stability transistors... resulted in lower hysteresis and bias temperature instability... Charge trapping is highly sensitive to the energetic alignment of the Fermi level of the channel with the defect band in the insulator, and thus, our approach maximizes the amount of electrically active border traps without the need to reduce the total number of traps in the insulator"