Lead-free HfO2-based FeRAM arrays with power consumption more than 100 times lower than conventional flash memories are only 10nm thick

https://www.leti-cea.com/cea-tech/leti/english/Pages/What's-On/Press%20release/HfO2-Based-FeRAM-Arrays-Designed--Fabricated-at-CEA-Leti-Bring-the-Technology-Closer-to-Manufacturability.aspx

"world's-first demonstration of 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node that advances this energy-saving technology closer to commercialization. The breakthrough includes back-end-of-line (BEOL) integration of TiN/HfO2:Si/TiN ferroelectric capacitors as small as 0.16 µm², and solder reflow compatibility for the first time for this type of memory"