Technique removes defects in molybdenum disulfide enabling it to be a fast, low-power semiconductor

https://phys.org/news/2025-03-defect-technique-paves-faster-power.html

"MoS2 deposition must be done at low temperature to prevent damaging existing silicon components... utilized pentafluorobenzenethiol at 200°C to repair defects in MoS2, achieving molybdenum to sulfur atomic ratio to near-ideal 1:1.98... increased chip density, minimized leakage current enabling heat-free chip, 2.5X better charge mobility compared to devices with defects, faster charge movement enabling quicker operational speed, power consumption sub-threshold swing value reduced 40%"