Gate-controllable two-dimensional transition metal dichalcogenides for spintronic memory

https://phys.org/news/2025-02-gate-dimensional-transition-metal-dichalcogenides.html

"smaller, high-speed, energy-efficient with modulate spin transport properties: 80 μW, maintaining high spin polarization ratios up to 0.9... enables precise control over memory operations... >4000% tunneling magnetoresistance ratios, improves spin current densities, reduces power consumption during read/ write... . These findings suggest that TMD-based spintronic memory devices are well-suited for next-generation applications requiring high-speed, energy-efficient memory solutions... AI, IoT"