Mottronics: Topological defects in the structure of Mott insulators in vanadium oxide can trigger transformation into a conductor

https://www.eurekalert.org/news-releases/1065024

"Mott insulators' poor conductivity determined by strong interactions among electrons moving non-linearity throughout lattice... small change of applied voltage induces dramatic electric property change/ release of some conducting electrons of about 1 per unit cell, many orders magnitude larger than what can be achieved in conventional semiconductors by doping... faster, more energy-efficient memories using topological defects switching between insulating/ conductive, neuromorphic devices, low-energy switches, AI"