Scientists develop highly efficient spin-orbit torque DRAM memory with atom-level control of composite oxides

https://phys.org/news/2024-06-scientists-generation-highly-efficient-memory.html

"non-volatile magnetization switching without magnetic field reduces memory power consumption 2 to 30X... efficiency 2 to 130X greater... opposite spin currents generated within single layer will not cancel each other out... strontium ruthenate, exhibiting magnetism, and spin-Hall effects on top/ bottom surface layers by minutely adjusting atomic lattice structure... creating spin-Hall effect imbalance with asymmetric surface structure enabling  metization in specific direction"