Breakthrough in memory technology: next-generation optoelectronic memory with tellurene

https://www.prnewswire.com/news-releases/breakthrough-in-memory-technology-next-generation-optoelectronic-memory-with-tellurene-302114374.html

"rhenium disulfide/ hexagonal boron nitride layers on top of hBN layer followed by 2D tellurene Van der Waals heterostructure, silicon dioxide substrate... weak inter-layer bonds, stable, room temperature, broad adsorption spectrum, reduced size and power consumption, high on-off switching ratios (106), loating-gate, long-term data retention... multi-bit storage states by varying gate voltage, input laser wavelength and power... broadband optical programmability for digital circuits, next-generation flash memory"