Semiconductor alternative transitions from electricity-resisting insulator to current-conducting metal

https://techxplore.com/news/2024-02-material-transistors-downsize-gen-tech.html

"smaller, more efficient transistors... Mott insulator topped with ferroelectric gate insulator, then using voltage to flip polarization directs transition from insulator to metal and back, with metallic phase number and density of electric charges surpassing that of semiconductors... 3d layer allows charges to migrate from Mott down to it... 385 record-high on-off ratio >20X higher... energy-efficient Mott-ferroelectric pairing a room temperature requires only sips of voltage to flip polarization... non-volatile memory"