Quantum material-based spintronic devices operate at ultra-low power

https://phys.org/news/2024-01-quantum-material-based-spintronic-devices.html

"applying 5 volts to 2D quantum heterostructure Fe3-xGeTe2 and ferroelectric In2Se3 spintronic device enables read and write memory controlling spin information of electrons... magnetic field required to change spin direction reduced >70%, reduced coercivity required to reorient spin... So, it is possible to control the spin information of electrons even with an approximately 70% reduced magnetic field, which is a key technology for the development of ultra-low-power spin memory based on quantum materials"