How magnetization direction can be controlled using strain in an interfacial multiferroic material

https://phys.org/news/2024-01-magnetization-strain-interfacial-multiferroic-material.html

"controlling electron spins straining orbital magnetic moments create high-performance magnetoelectric effect for spintronic computer memory... junction between ferromagnetic and piezoelectric materials... magnetization direction controlled by applying voltage originating from strain generated from piezoelectric material changing orbital magnetic moment of ferromagnetic material... provided guidelines for designing materials with large magnetoelectric effect... information writing technology that consumes less power"

Related: Building block for magnetoelectric spin-orbit logic opens new avenue for low-power beyond-CMOS technologies
https://phys.org/news/2024-04-block-magnetoelectric-orbit-logic-avenue.html