Transistor computes and stores data using epitaxial sliding ferroelectricity based on polarity-switchable molybdenum disulfide

https://phys.org/news/2023-12-team-transistors-ferroelectricity-based-polarity-switchable.html

"2D) semiconductors with sliding ferroelectricity realizing computing-in-memory, attaining necessary switchable electric polarization in these materials... average memory window 7V with 10V applied voltage, retention times >104 sec, endurance >104 cycles... non-volatility, reprogrammability, and low switching fields sliding ferroelectricity, banking on shear transformation-induced dislocations in 3R MoS2 film... large-scale, high-throughput memory... future:  high switching speed and long retention memory"

Related: A ferroelectric dimeric liquid crystal with huge spontaneous polarization and dielectric constant at low temperatures

https://phys.org/news/2024-01-ferroelectric-dimeric-liquid-crystal-huge.html