Researchers improve the performance of semiconductors using novel 2D metal
https://phys.org/news/2023-08-semiconductors-2d-metal.html
"2D metal TiSx on top of 2D semiconductor MoS2 by plasma-enhanced atomic layer growth optimizes growth conditions obtain atomically clean interface between such materials... transistor performance MoS2 is almost 2X better when contacted with the 2D metal TiSx compared to Ti and Au 3D metals, in most figures-of-merit of transistor... in presence of TiSx intrinsic charge carrier density MoS2 increases leading to improved performance.... metallic contacts 2D and 3D device integration thinned down, increasing density"
Related:
Researchers Develop One-Atom-Thick 2D Wafers in Major Breakthrough
Growing full wafers of high-performing 2D semiconductor that integrates with state-of-the-art chips
Neutralizing electronic inhomogeneity in cleaved bulk MoS₂
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