Advancing 2D materials: Achieving the goal with UV-assisted atomic layer deposition

https://phys.org/news/2023-08-advancing-2d-materials-goal-uv-assisted.html

"high-performance graphene-dielectric interface... 5 seconds per cycle during the ALD process), demonstrating the possibility of depositing high-density, high-purity atomic layer dielectric films at low temperatures (below 100℃)... 3X increase in charge mobility and a significant reduction in Dirac voltage due to the reduced defects on the graphene surface... semi-conductor and energy devices" 

Related: Research team develops new thin film deposition process for tin selenide-based materials
https://phys.org/news/2024-05-team-thin-deposition-tin-selenide.html