New material shows promise for next-generation memory technology

https://phys.org/news/2023-07-material-next-generation-memory-technology.html

"sputtering large-area 2D vdW tetra-chalcogenides... niobium telluride... initially amorphous crystallized 2D layered annealing temperatures above 272 ºC... reduced reset energies and improved thermal stability amorphous phase... selected area electron diffraction and crossectional TEM image as-deposited and 350 ℃ annealed NbTe4 thin films.... low energy... 10-year data retention 135 ºC... automotive industry... fast-switching speed 30 ns... low melting point 447 ºC, high crystallization temperature, excellent switching"