Study demonstrates the potential of ferroelectric hafnia for developing low-power logic devices

https://techxplore.com/news/2023-05-potential-ferroelectric-hafnia-low-power-logic.html

"enables smaller devices... ferroelectric hafnium dioxide (HfO2) or hafnia... 2nm film gate stack FinFET increased total capacitance... 10^15 cycles voltage pulses NDC advanced logic devices... Notably, the team's approach for leveraging NDC in compact transistors does not require any structural modifications to the devices and is also compatible with 3D architectures. This makes it easier to implement on a large-scale"