Atom-thin walls could smash size, memory barriers in next-gen devices

https://phys.org/news/2023-02-atom-thin-walls-size-memory-barriers.html

"passage of electrical spikes sent via oxygen-deprived movable walls depend on which signals have passed through before, making them adaptable and energy efficient... retain data even when devices turn off... thin-sliced bismuth ferrite... ferroelectricity, the polarization of its positive and negative electric charges flipped by applying just a pinch of voltage... links ferroelectricity with electrochemistry... motion of oxygen vacancies basically controls the motion of these domain walls"

Related: Discovery of ferroelectricity in an elementary substance

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