25-nm iPMA Hexa-MTJ technology for scalable eFlash type STT-MRAM

https://techxplore.com/news/2022-12-nm-ipma-hexa-mtj-technology-scalable.html

"low resistance area MgO... low temperature dependence recording layer... low damage fabrication process... stable reference layer... 20+ years of data retention characteristics... solder reflow capability... Endurance reached at least 1 X 107 cycles... 25 nm MTJ... can replace eFlash for X nm generation CMOS logic... ultra-low-power consumption, excellent scalability, and high reliability of application processors in a wide range of fields, such as IoT, AI, and harsh environmental applications"

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