Stable, faster computer memory storage at the nanometer scale

https://phys.org/news/2022-11-stable-faster-memory-storage-nanometer.html

"HfO2 undergoes a two-step transition resulting in a change in the arrangement of its atoms when grown on a thin film. This allows it to "transition from one phase, which isn't very useful, to a special one that could be useful for the next generation of information storage devices... paves the way for developing the next generation of materials that could someday soon integrate both processing and memory onto a single chip"