Protons fix a long-standing issue in silicon carbide electronics

https://techxplore.com/news/2022-11-protons-long-standing-issue-silicon-carbide.html

"fault suppression technique proton implantation prevents bipolar degradation in 4H-SiC semiconductor wafers when applied prior to device fabrication process... diodes that had undergone proton implantation performed just as well as regular ones but without signs of bipolar degradation... deterioration of current–voltage characteristics of diodes caused by proton implantation at lower doses not significant... more reliable and cost-effective SiC devices that can reduce power consumption in trains and vehicles"

Related:

Improved performance/ reliability of SiC transistors with annealing process using diluted hydrogen

Mass producible 3.8g, SiC diffractive waveguide without Rainbow Artifacts
https://www.eurekalert.org/news-releases/1095904











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