Gate-tunable heterojunction tunnel triodes based on 2D metal selenide and 3D silicon

https://techxplore.com/news/2022-11-gate-tunable-heterojunction-tunnel-triodes-based.html

"2D InSe or WSe2 is combined with silicon all three major performance characteristics of the device mentioned above can be simultaneously improved... stamped InSe crystal onto p-doped silicon wafer... created contacts using lithography deposited top gate-dielectric, and patterned gate electrodes... steep sub-threshold swings, ON/OFF current ratios and On current density for tunneling devices, making them some of the most energy efficient and effective switches based on tunneling phenomena"