Bilayer tungsten diselenide transistors with ON-state current densities over 1.5 milliamperes per micrometer

"ultrashort channel devices requires high-resolution lithography and metallization processes introduce contaminations to atomically thin 2DSCs, compromising performance... gap between merged VSe2 domains grown on bilayer WSe2... ultrashort channel bilayer WSe2 transistors with optimized synthetic vdW contacts, ON-state current density 1.72 mA/μm and linear resistance 0.50 kΩ·μm"