Monolithic integration of GaN components boosts power integrated circuits

https://techxplore.com/news/2022-03-monolithic-gan-components-boosts-power.html

"We have improved the performance of GaN ICs by co-integrating d-mode HEMTS on our functional e-mode HEMT platform on SOI. Enhancement and depletion mode refer to an ON (d-mode) or OFF (e-mode) state at zero source voltage, resulting in a current flow (or not) in the transistor. We expect that taking the step from RTL to direct-coupled FET logic will improve speed and reduce the power dissipation of the circuits"

Related: Quantum Physics Sets a Speed Limit to Electronics

Comments