Developing a new layered material for future electronics

https://phys.org/news/2022-03-layered-material-future-electronics.html

"ultra-low energy technologies beyond CMOS electronics... avenue towards multiferroic nanodevices, the work will motivate experimentalists in this field to explore further opportunities for the use of In2Se3/FGT in future low-energy electronic devices... Synthesizing a new multiferroic heterojunction that has the ability to "tune" the Schottky barrier height, and switch between an n-type and p-type, via a switch in ferroelectric polarization... Exploring heterostructures of In2Se3 with other ferromagnetic materials"