Creating sub-1-nm gate lengths for MoS2 transistors

https://techxplore.com/news/2022-03-sub-nm-gate-lengths-mos2-transistors.html

"multiple-layer sandwich of materials... covered by a layer of graphene, followed by a layer of aluminum oxide. Next, they etched the material to remove the top layers from half of their transistor, leaving a stairstep configuration to expose the edge of the graphene layer, allowing its use as a gate. They then covered both parts of the transistor with a layer of hafnium oxide to create a channel between the source and drain and through the gate. Then finally, they added two metal electrodes"

Related: How a thin-film copper sandwich is transforming electronics

https://phys.org/news/2023-02-thin-film-copper-sandwich-electronics.html